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BROADCOM – HSMS-2815-TR1G – RF Schottky Diode, Barrier, Dual, 20 V, 1 A, 410 mV, 1.2 pF, SOT-143
BROADCOM – HSMS-2815-TR1G – RF Schottky Diode, Barrier, Dual, 20 V, 1 A, 410 mV, 1.2 pF, SOT-143
The HSMS-2815-TR1G is a surface-mount RF Schottky Barrier Diode specifically designed for both analogue and digital applications. It offers a wide range of specifications and package configurations to give the designer wide flexibility. The device diode features very low flicker (1/f) noise.
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DIODES INC. - MMBTH24-7-F - Bipolar - RF Transistor, NPN, 40 V, 400 MHz, 300 mW, 50 mA, SOT-23
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DIODES INC. - MMBTH24-7-F - Bipolar - RF Transistor, NPN, 40 V, 400 MHz, 300 mW, 50 mA, SOT-23
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TAIWAN SEMICONDUCTOR - TS19372CX5 RF - IC, LED DRIVER, WHITE, BUCK, 5SOT25
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